CM9112 Datasheet, PDF (5/18 Pages) California Micro Devices Corp – Dual Inputs Dual Outputs High Accurate Fast Charger

PRELIMINARY
CM9112
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE 1)}
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX UNITS
CT
Constant-temperature
Mode, Limit
(Note 2)
95
105
125
C
OTP
Over-temperature Protec­ (Note 3)
130
140
150
C
tion, Limit
OCP
Over-Current Charging
(OCP), Limit
1.5
1.7
1.8
A
R_DSON R_DSON of Charger MOSFET I_CC = 500mA
100
120
150
mΩ
T_PR
Precharge Timeout
Adaptor in; BSEN < 3.2V,
27
30
33
Min.
(Note 4)
CT=0.1µF, 1%
T_TER
Termination Timeout
Adaptor in; BSEN >
54
60
66
Min.
(Note 4)
4.19V, CT=0.1µF, 1%
VREF
V_REF
Regulated Voltage V_REF I_REF < 1mA
4.190
4.200
4.210
V
VSYS (Available only with Adapter plugged-in) (Note 5)
R_DSON
MOSFET R_ON
0.25
Ω
V_SYS
Output Voltage Load Regu­ I_OUT = 10mA to 300mA
4.1
4.2
4.3
V
lation
I_OUT = 10mA to 450mA
3.9
4.0
4.1
V
I_SYS
Output Current available 3.9V<VSYS<4.3
10
450
mA
I_LIMIT
Over-Current Shut-down (Note 6)
1200
1500
mA
Threshold
Control Function
I_BSEN
BSEN Pin Leakage Current V_IN = 0
0.2
1.0
µA
V_STAT1
V_STAT2
STAT1, STAT2 (Open Drain) I_SINK = 5mA
Output Low Voltage
I_SINK = 20mA
0.1
V
0.5
V
V_{IH EN}
ENA Input High Level
1.5
V
V_{IL EN}
ENA Input Low Level
0.4
V
Thermistor Function (Note 7, 8)
V_BH
Battery HOT Voltage
V_IN = 5.0V
Threshold (THERM Pin) (Note 9)
0.9 x V_BH V_BH = 0.5 x V_IN 1.1 x V_BH V
V_BC
Battery COLD Voltage
V_IN = 5.0V
Threshold (THERM Pin) _{(Note 9)}
0.9 x V_BC V_BC = 7/8 x V_IN 1.1 x V_BC V
Hysterezis of V_BH, V_BC
80
100
120
mV
Note 1: T_A = 25°C unless otherwise specified.
Note 2: When chip temperature reaches 105°C, the IC’s internal thermal limit will maintain this temperature by decreasing the pro­
grammed charge current.
Note 3: When chip temperature reaches 140°C, the IC goes into a latched shutdown mode. It stops charging, stops supplying VSYS
with current from Adapter/USB, and switches VSYS (Baseband) to VOUT(Battery). To resume the charging function, a tog­
gle of VAD/USB is required.
Note 4: The timeout can be disabled by connecting the CT pin to VIN. When enabled, both Timeout1 and 2 are proportional to the
value of the capacitor connected on the pin CT. However, the ratio Timeout2/Timeout1 is constant and equal to two. The tim­
ing periods are digital, internally generated, based on a clock rate programmable by an external capacitor connected in the
CT pin. Timeout feature is available only with AC Adaptor plugged in. Under USB input, both timeout are disabled to allow
longer charging time due to low input current available.
Note 5: When both the Adapter and USB are removed, VSYS is switched over to battery, through an external MOSFET, Q2.
Note 6: When the VSYS maximum current limit is reached, LDO1 regulates this current by decreasing VSYS. However, VSYS can­
not go below VOUT (battery) by more than one diode’s forward voltage (Vfwd) due to the body diode of the external MOS­
© 2006 California Micro Devices Corp. All rights reserved.
07/06/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: [phone] lFax: [phone] lwww.cmd.com
5