PACUSB-U1 Datasheet, PDF (4/7 Pages) California Micro Devices Corp – Upstream USB Port Terminator

Specifications (con’t)
PACUSB-U1/U2/U3
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL PARAMETER
R1
Resistance R1 (PACUSB-U1 only)
R1
Resistance R1 (PACUSB-U2 only)
R1
Resistance R1 (PACUSB-U3 only)
R2
Resistance R2
C1
Capacitance C1
I_LEAK
V_D1
V_D2
V_ESD
Diode Leakage Current to GND
Diode Reverse-biased Stand-off
Voltage
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
CONDITIONS
Measured at T_A = 25°C
Measured at T_A = 25°C
Measured at T_A = 25°C
Measured at T_A = 25°C
Measured at 1 MHz, 2.5VDC,
T_A =25°C
At 3.3VDC and T_A = 25°C
I = 10μA,T_A = 25°C
@ 10mA, T_A = 25°C
@ 10mA, T_A = 25°C
MIN TYP MAX UNITS
12
15
18
Ω
26
33
40
Ω
18
22
26
Ω
1.2
1.5
1.8
kΩ
38
47
56
pF
1
100
nA
5.5
V
5.6
6.8
8.0
V
-1.2 -0.8 -0.4
V
Human Body Model, MIL-STD-883, Notes 1,2
Method 3015
±30
kV
IEC 61000-4-2, contact discharge Notes 1,2
method (I/O pins)
±15
kV
IEC 61000-4-2, contact discharge Notes 1,2
method (V_3.3 pin)
±25
kV
V_CLAMP Clamping Voltage during ESD
Discharge
MIL-STD-883, Method 3015, 8kV;
Notes 1,2
Positive
10
V
Negative
-5
V
Note 1: ESD applied to input/output/V_3.3 pins with respect to GND, one at a time. Clamping voltage is measured at the opposite side
of the EMI filter to the ESD pin (i.e., if ESD is applied to pin 1, then clamping voltage is measured at pin 6). Unused pins are
open.
Note 2: These parameters guaranteed by design.
© 2006 California Micro Devices Corp. All rights reserved.
4
490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: [phone] ● Fax: [phone] ● www.cmd.com 05/01/06