CM1293 Datasheet, PDF (4/10 Pages) California Micro Devices Corp – 2, 4, and 8-Channel Low Capacitance ESD Protection Arrays

CM1293
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS¹
SYMBOL PARAMETER
CONDITIONS
MIN
V_P
Operating Supply Voltage (V_P-V_N)
I_P
Operating Supply Current
(V_P-V_N)=3.3V
V_F
Diode Forward Voltage
I_F = 8mA; T_A=25°C
Top Diode
0.60
Bottom Diode
0.60
I_LEAK Channel Leakage Current
T_A=25°C; V_P=5V, V_N=0V
C_IN
Channel Input Capacitance
At 1 MHz, V_P=3.3V, V_N=0V, V_IN=1.65V;
Note 2
ΔC_IO ^{Channel I/O to I/O capacitance}
V_ESD
ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per Notes 2, 4 & 5; T_A=25°C
±8
IEC 61000-4-2 standard
b) Human Body Model,
MIL-STD-883, Method
Notes 2, 3 & 5; T_A=25°C
±15
3015
V_CL Channel Clamp Voltage
Positive Transients
Negative Transients
At 8kV ESD HBM; T_A=25°C; Notes 2 & 3
R_DYN
Dynamic Resistance
Positive Transients
Negative Transients
T_A=25°C; Notes 5 & 6
TYP
3.3
0.80
0.80
±0.1
1.5
+9.0
-9.0
1.2
0.6
MAX
5.5
8.0
UNITS
V
μA
0.95
V
0.95
V
±1.0 μA
2.0
pF
pF
kV
kV
V
V
Ω
Ω
Note 1: All parameters specified at T_A = -40°C to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: Human Body Model per MIL-STD-883, Method 3015, C_Discharge = 100pF, R_Discharge = 1.5KΩ, V_P = 3.3V, V_N grounded.
Note 4: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 3.3V, V_N grounded.
Note 5: These measurements performed with no external capacitor on V_P.
Note 6: Measured under pulsed conditions, pulse width = 0.7mS, maximum current = 1.5A.
© 2006 California Micro Devices Corp. All rights reserved.
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