CM1216 Datasheet, PDF (4/9 Pages) California Micro Devices Corp – 6- and 8-Channel Low Capacitance ESD Arrays

Specifications (cont’d)
PRELIMINARY
CM1216
ELECTRICAL OPERATING CHARACTERISTICS ^{NOTE 1}
SYMBOL
V_P
I_P
V_F
I_LEAK
C_IN
ΔC_IN
C_MUTUAL
V_ESD
V_CL
PARAMETER
Operating Supply Voltage
(V_P-V_N)
Operating Supply Current
Diode Forward Voltage
Top Diode
Bottom Diode
Channel Leakage Current
Channel Input Capacitance
Channel Input Capacitance
Matching
Mutual Capacitance
ESD Protection
Peak Discharge Voltage at
any channel input, in system,
contact discharge per
IEC 61000-4-2 standard
Channel Clamp Voltage
Positive Transients
Negative Transients
CONDITIONS
(V_P-V_N) = 3.3V
I_F = 20mA; T_A=25°C
T_A = 25°C; V_P= 5V, V_N = 0V
At 1 MHz, V_P=3.3V, V_N =0V,
V_IN=1.65V;Note2
Note 2
(V_P-V_N) = 3.3V; Note 2
Notes 2, 3, and 4; T_A = 25°C
I_PP = 1A, t_P = 8/20μS;
T_A=25°C; Notes 2
MIN
0.6
0.6
±15
TYP
3.3
0.8
0.8
±0.1
1.6
0.04
0.13
+9.0
-1.5
R_DYN
Dynamic Resistance
I_PP = 1A, t_P = 8/20μS;
Positive transients
Negative transients
T_A=25°C; Notes 2
0.6
0.4
Note 1: All parameters specified at T_A = -40°C to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 3.3V, V_N grounded.
Note 4: From I/O pins to V_P or V_N only. V_P bypassed to V_N with low ESR 0.2μF ceramic capacitor.
MAX
5.5
8
0.95
0.95
±1.0
2.0
UNIT
V
μA
V
V
μA
pF
pF
pF
kV
V
V
Ω
Ω
© 2005 California Micro Devices Corp. All rights reserved.
4 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: [phone] ● Fax: [phone] ● www.calmicro.com 06/30/05