CM1210 Datasheet, PDF (4/13 Pages) California Micro Devices Corp – CMOS Nonvolatile Controller Circuit

CM1210
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE 1)}
SYMBOL PARAMETER
CONDITIONS
I_P
V_F
I_LEAK
C_IN
V_ESD
V_CL
Supply Current
Diode Forward Voltage
Top Diode
Bottom Diode
(V_P-V_N)=3.3V
I_F = 8mA
Channel Leakage Current
Channel Input Capacitance
ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per IEC
61000-4-2 standard
Channel Clamp Voltage
CM1210-01ST, CM1210-01SC,
CM1210-02ST, CM1210-02SC
Positive Transients
Negative Transients
At 1 MHz, V_P=3.3V, V_N=0V,
V_IN=1.65V; Note 2 applies
Notes 2,3 and 5; T_A=25°C
At 8kV ESD HBM; Notes 2 & 4
Channel Clamp Voltage
CM1210-04ST, CM1210-08MS
Positive Transients
Negative Transients
At 8kV ESD HBM; Notes 2 & 4
MIN
0.60
0.60
+6
TYP
MAX
8.0
0.80
0.95
0.80
0.95
+0.1
+1.0
1.0
1.3
V_P + 10.0
V_N - 10.0
V_P + 13.0
V_N - 13.0
UNIT
S
µA
V
V
µA
pF
kV
V
V
V
V
Note 1: All parameters specified at T_A = -40°C to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: From I/O pins to V_P or V_N only. V_P bypassed to V_N with a 0.22µF ceramic capacitor (see Application Information for more
details).
Note 4: Human Body Model per MIL-STD-883, Method 3015, C_Discharge = 100pF, R_Discharge = 1.5KΩ, V_P = 3.3V, V_N grounded.
Note 5: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 3.3V, V_N grounded.
© 2004 California Micro Devices Corp. All rights reserved.
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01/14/04