CM1208 Datasheet, PDF (4/6 Pages) California Micro Devices Corp – 7 & 8-Channel High-Speed ESD Protection Arrays

CM1208-07/08
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE 1)}
SYMBOL PARAMETER
CONDITIONS
MIN
I_P
Supply Current
(V_P-V_N)=5.0V
V_F
Diode Forward Voltage
Top Diode
Bottom Diode
I_F = 20mA; T_A=25°C
0.60
0.65
I_LEAK Channel Leakage Current
T_A=25°C
C_IN
Channel Input Capacitance
At 1 MHz, OSC Level =
30mV, V_P=5V, V_N=0V,
V_CH=2.5V;
Note 2 applies
V_ESD
ESD Protection
Peak Discharge Voltage at any chan-
nel input
a) Contact discharge per
Notes 2, 3 & 5
±8
IEC 61000-4-2 standard
b) Human Body Model, MIL-
Notes 2, 3 & 4
±15
STD-883, Method 3015
V_CL Channel Clamp Voltage
Positive Transients
Negative Transients
At 8kV ESD HBM;
T_A=25°C; Note 2, 3 & 4
TYP
MAX UNITS
10
µA
0.7
0.95
V
0.8
0.95
V
±0.1
±1.0
µA
3
5
pF
kV
kV
V_P + 5.0
V
V_N - 5.0
V
Note 1: All parameters specified at T_A=-40 to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: From I/O pins to V_P or V_N only. A bypass capacitor between V_{P and} V_N is required. It is recommended that V_P be bypassed
to V_N with a 0.2µF ceramic capacitor.
Note 4: Human Body Model per MIL-STD-883, Method 3015, C_Discharge = 100pF, R_Discharge = 1.5KΩ, V_P = 5.0V, V_N grounded.
Note 5: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 5.0V, V_N grounded.
Performance Information
Typical Channel Input Capacitance vs. Channel Input Voltage at T_A=25°C
5
4
3
T y p ic a l V a r ia t io n o f C _IN vs. V_IN
2
(V_P = 5V, V_N = 0V, 0.2 µF chip capacitor between V_P and V_N)
1
0
0
1
2
3
4
5
Input Voltage
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02/02/04