CSPEMI306A Datasheet, PDF (3/10 Pages) California Micro Devices Corp – 6 Channel EMI Filter Array with ESD Protection

Specifications
PARAMETER
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
CSPEMI306A
ABSOLUTE MAXIMUM RATINGS
RATING
-65 to +150
100
600
UNITS
°C
mW
mW
PARAMETER
Operating Temperature Range
STANDARD OPERATING CONDITIONS
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS¹
SYMBOL
R
C
TCR
TCC
V_DIODE
I_LEAK
V_SIG
V_ESD
V_CL
f_C
PARAMETER
Resistance
Capacitance
Temperature Coefficient of Resistance
Temperature Coefficient of Capacitance
Diode Voltage (reverse bias)
Diode Leakage Current (reverse bias)
Signal Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
Cut-off frequency
Z_SOURCE = 50Ω, Z_LOAD = 50Ω
CONDITIONS
At 2.5V DC
At 2.5V DC
I_DIODE=10µA
V_DIODE=3.3V
I_LOAD = 10mA
Notes 2,4 and 5
Notes 2,3,4 and 5
R = 100Ω, C = 30pF
MIN TYP
80 100
24 30
1200
-300
5.5
5.6 6.8
-0.4 -0.8
±30
±15
MAX
120
36
100
9.0
-1.5
UNITS
Ω
pF
ppm/°C
ppm/°C
V
nA
V
V
kV
kV
+10
V
-5
V
58
MHz
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1,
then clamping voltage is measured at Pin C1.
Note 4: Unused pins are left open
Note 5: These parameters are guaranteed by design and characterization.
© 2003 California Micro Devices Corp. All rights reserved.
10/10/03 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 L Tel: [phone] L Fax: [phone] L www.calmicro.com
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