CM1621 Datasheet, PDF (3/9 Pages) California Micro Devices Corp – LCD and Camera EMI Filter Array with ESD Protection

CM1621
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE1)}
SYMBOL
R
C_TOTAL
PARAMETER
Resistance
Total Channel Capacitance
C
Capacitance C
V_DIODE
I_LEAK
V_SIG
V_ESD
R_DYN
f_C
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
In-system ESD Withstand Voltage
a) Human Body Model (HBM),
MIL-STD-883, Method 3015
b) Contact Discharge per
IEC 61000-4-2 Level 4
Dynamic Resistance
Positive
Negative
Cut-off Frequency
Z_SOURCE = 50Ω, Z_LOAD = 50Ω
CONDITIONS
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
I_DIODE = 10μA
V_DIODE = +3.3V
I_LOAD = 1.0mA
Notes 2 and 3
Channel R = 100Ω,
Channel C = 15pF
A_1GHz ^{Absolute Attenuation @ 1GHz from 0dB}
Level
A_{800MHz -} ^{Absolute Attenuation @ 800MHz to}
3 GHz
3GHz from 0dB Level
Z_SOURCE = 50Ω, Z _LOAD = 50Ω,
DC Bias = 0V; Notes 1, 4, 5
Z_SOURCE = 50Ω, Z _LOAD = 50Ω,
DC Bias = 0V; Notes 1, 4, 5
MIN TYP MAX UNITS
85 100 115
Ω
27 34
41
pF
17
pF
6.0
V
200
nA
6.0 7.0 8.0
V
±30
kV
±15
kV
2.3
Ω
0.9
Ω
90 135 MHz
Note 3
-40
dB
-35
dB
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: These parameters are guaranteed by design and characterization.
Note 4: Attenuation / RF curves characterized by a network analyzer using microprobes.
Note 5: These parameters are NOT guaranteed by design, characterization and production.
© 2008 California Micro Devices Corp. All rights reserved.
490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: [phone] ● Fax: [phone] ● www.cmd.com
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Issue A – 8/4/08