CM1240 Datasheet, PDF (3/6 Pages) California Micro Devices Corp – Dual-Voltage ESD Protection Array for USB Port

CM1240
Specifications
ELECTRICAL OPERATING CHARACTERISTICS ^{(NOTE 1)}
Symbol
Parameter
Conditions
Min
Typ
Max Units
C_LV LV diode Capacitance at 3Vdc; 1MHz, 30mVac
6
pF
C_HV HV diode Capacitance at 3Vdc; 1MHz, 30mVac
25
pF
I_LV
LV Diode Leakage at +3.3V reverse bias voltage
0.01
0.4
μA
I_HV
HV Diode Leakage at +11V reverse bias voltage
0.01
0.4
μA
V_CL(LV)
LV Diode Signal Clamp Voltage:
Positive Clamp, 10mA
Negative Clamp, –10mA
5.6
6.8
9
V
–1.5
–0.8
–0.4
V
V_CL(HV)
HV Diode Signal Clamp Voltage:
Positive Clamp, 10mA
Negative Clamp, –10mA
13
16
19
V
–1.5
–0.8
–0.4
V
V_ESD In-system ESD withstand voltage:
Note 2
Human Body Model (MIL-STD-883, method 3015)
±25
kV
IEC 61000-4-2, contact discharge method
±12
kV
R_DYN(LV)
LV Diode Dynamic Resistance:
Positive
Negative
2.8
Ω
1.2
Ω
R_DYN(HV) HV Diode Dynamic Resistance:
Positive
Negative
1
Ω
0.7
Ω
Note 1: Guaranteed at 25°C only
Note 2: ESD applied to input/output pins with respect to GND, one at a time. These parameters are guaranteed by design.
© 2007 California Micro Devices Corp. All rights reserved.
5/16/07 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 l Tel: [phone] l Fax: [phone] l www.cmd.com
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