NESG2021M16 Datasheet, PDF (1/3 Pages) California Micro Devices Corp – NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

PRELIMINARY DATA SHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2021M16
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 22.5 dB at 2 GHz
• LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
M16
DESCRIPTION
NEC's NESG2021M16 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NESG2021M16
M16
SYMBOLS
NF
Ga
NF
Ga
MSG
|S21E|²
P1dB
OIP3
fT
Cre
ICBO
IEBO
hFE
PARAMETERS AND CONDITIONS
UNITS
Noise Figure at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Maximum Stable Gain¹ at VCE = 3 V, IC = 10 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
Output Power at 1dB Compression Point at
VCE = 3 V, ICQ = 12 mA, f = 2 GHz
Output 3rd Order Intercept Point at VCE = 3 V, ICQ = 12 mA, f = 2 GHz
Gain Bandwidth Product at VCE = 3 V, IC = 10 mA, f = 2 GHz
Reverse Transfer Capacitance² at VCB = 2 V, IE = 0 mA, f = 1 GHz
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain³ at VCE = 2 V, IC = 5 mA
dB
dB
dB
dB
dB
dB
dBm
dBm
GHz
pF
nA
nA
Notes:
1. MSG = ^S21
S12
2. Collector to base capacitance when the emitter grounded.
3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
MIN
15.0
20.0
17.0
20
130
TYP
1.3
10.0
0.9
18.0
22.5
19.0
9
17
25
0.1
190
MAX
1.2
0.2
100
100
260
California Eastern Laboratories