MSU4N40 Datasheet, PDF (3/8 Pages) Bruckewell Technology LTD – 400V N-Channel MOSFET

MSU4N40
400V N-Channel MOSFET
Dynamic Characteristics
Symbol
Test Conditions
Min
t_d(on)
--
t_r
V_DS = 200 V, I_D = 4.5 A,
--
t_d(off)
R_G = 25 Ω
--
tf
--
Q_g
--
Q_gs
V_DS = 320 V,I_D = 4.5 A,
--
V_GS = 10 V
Q_gd
--
C_ISS
--
C_OSS
V_DS = 25 V, V_GS = 0 V,
F = 1.0MHz
--
C_RSS
--
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min
I_S
--
I_SM
--
V_SD
I_S = 4.5 A , V_GS = 0 V
--
t_rr
I_S = 4.5 A , V_GS = 0 V
--
Q_rr
diF/dt = 100A/μs
--
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I_AS=4.5A, V_DD=50V, R_G=25Ω, Starting T_J=25℃
3. I_SD≦4.5A, di/dt≦300A/μs,V_DD≦BV_DSS, Starting T_J=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Typ.
Max. Units
15
35
ns
65
140
ns
23
55
ns
40
85
ns
16
20
nC
2.3
--
nC
8.5
--
nC
480
625
pF
80
105
pF
15
20
pF
Typ.
Max. Units
--
4.5
A
--
18
--
1.4
V
230
--
ns
1.7
--
μC
Publication Order Number: [MSU4N40]
© Bruckewell Technology Corporation Rev. A -2014