MS34N02 Datasheet, PDF (3/7 Pages) Bruckewell Technology LTD – 30V(D-S) N-Channel Enhancement Mode Power MOSFET

MS34N02
30V(D-S) N-Channel Enhancement Mode Power MOSFET
Switching Characteristics (Note 4)
Symbol Parameter
Test Conditions
Min
t_d(on)
Turn-on Delay Time
--
t_r
Turn-on Rise Time
V_DD = 15 V , I_D = 1 A
--
t_d(off)
Turn-Off Delay Time
V_GS= 10 V , R_GEN = 6 Ω
--
tf
Turn-Off Fall Time
--
Q_g
Total Gate Charge
--
Q_gs
Gate-Source Charge
V_DS = 15 V , I_D = 3 A,
--
V_GS = 10 V
Q_gd
Gate-Drain Charge
--
Drain-Source Diode Characteristics
Symbol Parameter
Test Conditions
Min
V_SD
Diode Forward Voltage (Note 3) V_GS = 0 V , I_S = 3 A
--
I_S
Diode Forward Current (Note 2)
--
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Typ.
Max. Units
3.5
--
ns
1.5
--
ns
17.5
--
ns
2.5
--
ns
10
--
nC
0.95
--
nC
1.6
--
nC
Typ.
Max. Units
--
-1.2
V
--
3
A
Publication Order Number: [MS34N02]
© Bruckewell Technology Corporation Rev. A -2016