S9014 Datasheet, PDF (2/4 Pages) Weitron Technology – NPN General Purpose Transistors

S9014
NPN Plastic-Encapsulate
Transistors
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (Ta=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
50
V
V_CEO
Collector-Emitter Voltage
45
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current
0.1
A
P_C
Collector Power Dissipation
0.2
W
Tj
Junction Temperature
150
°C
Tstg
Storage Temperature
-55 to +150
°C
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
MIN
V_(BR)CBO Collector-base breakdown voltage
I_C = 100μA , I_E = 0
50
V_(BR)CEO Collector-emitter breakdown voltage I_C = 0.1 mA , I_B = 0
45
V_(BR)EBO Emitter-base breakdown voltage
I_E = 100μA , I_C = 0
5
I_CBO
Collector cut-off current
V_CB = 50 V , I_E = 0
I_CEO
Collector cut-off current
V_CB = 35 V , I_E = 0
I_EBO
Emitter cut-off current
h_FE
DC current gain
V_EB = 3 V , I_C = 0
V_CE = 5 V , I_C = 1 mA
200
V_CE(sat)
Collector-emitter saturation voltage _{IC = 100 mA , IB = 5 mA}
V_BE(sat)
Base-Emitter Saturation Voltage
I_C = 100 mA , I_B = 5 mA
f_T
Transition frequency
V_CE = 5 V , I_C = 10 mA
150
f = 30 MHz
TYP MAX UNIT
V
V
V
0.1
μA
0.1
μA
0.1
μA
1000
0.3
V
1.0
V
MHz
Publication Order Number: [S9014]
© Bruckewell Technology Corporation Rev. A -2014