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| S9012LT Datasheet, PDF (2/4 Pages) Bruckewell Technology LTD – PNP EPITAXIAL SILICON TRANSISTOR | |||
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S9012LT
PNP EPITAXIAL SILICON
TRANSISTOR
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (Ta=25°C unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
PD
Collector Power Dissipation
Tj,Tstg
Junction and Storage Temperature
S9012
-40
-30
-5
-500
300
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
°C
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
MIN
V(BR)CBO Collector-base breakdown voltage
IC = -100μA
-40
V(BR)CEO Collector-emitter breakdown voltage IC = -1 mA
-30
V(BR)EBO Emitter-base breakdown voltage
IE = -100μA
-5
ICBO
Collector cut-off current
VCB = -35 V , IE = 0
IEBO
Emitter cut-off current
VEB = -5 V , IC = 0
hFE(1)
DC current gain
VCE = -1 V , IC = -100 mA
70
VCE(sat)
Collector-emitter saturation voltage IC = -500 mA , IB = -50 mA
VBE
Base-Emitter Saturation Voltage
VCE = -1 V, IC =-100mA
fT
Transition frequency
VCE = -6 V , IC = -20 mA
150
Cob
Collector output capacitance
VCB = -6 V , IE = 0
f = 1.0MHz
TYP MAX UNIT
V
V
V
-0.1
uA
-0.1
uA
400
-0.6
V
-0.8
-1.0
V
300
MHz
7
10
pF
CLASSIFICATION OF hFE
Rank
Rang
L
70-200
H
200-400
Publication Order Number: [S9012LT]
© Bruckewell Technology Corporation Rev. A -2014
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