MSQ94P33 Datasheet, PDF (2/4 Pages) Bruckewell Technology LTD – Dual N-Channel 20-V (D-S) MOSFET

Preliminary_MSQ94P33
Dual N-Channel 20-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (T_A=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
-20
V
±12
V
I_D
Drain Current -Continuous (T_A=25°C)
Drain Current -Continuous (T_A=70°C)
I_DM
Drain Current Pulsed
I_S
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a (T_A=25°C)
P_D
Power Dissipation ^a (T_A=70°C)
-8.3
A
-6.7
A
±50
A
-2.1
A
3.1
W
2.0
T_J,T_STG
Operating and Storage Temperature Range
-55 to +150
°C
Thermal Resistance Characteristics
Symbol
Parameter
Maximum Junction-to-Ambient ^a ( t<= 10 sec)
R_θJA
Maximum Junction-to-Ambient ^a (Steady State)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Value
40
70
Units
°C/W
Static
Symbol
V_GS(th)
r
DS(on)
I_DSS
I_GSS
I_D(on)
V_SD
Gfs
Test Conditions
V_GS = V_DS , I_D=250uA
V_GS = -4.5 V , I_D = -8.3 A
V_GS = -2.5 V , I_D = -6.7 A
V_DS = -16 V , V_GS = 0 V
V_DS = -16 V , V_GS = 0 V , Tj = 55°C
V_GS = ±12 V , V_DS = 0 V
V_GS = -10 V , V_DS = -4.5 V
V_GS = 0 V , I_S = 2.5 A
V_DS = -15 V , I_D = -8.3 A
Min
Typ.
Max. Units
-0.7
--
--
V
--
--
60
mΩ
80
--
--
-1
uA
-5
--
--
±100
nA
-50
--
--
A
--
-0.6
--
V
--
70
--
S
Publication Order Number: [MSQ94P33]
© Bruckewell Technology Corporation Rev. A -2014