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MSF9N70 Datasheet, PDF (2/8 Pages) Bruckewell Technology LTD – 700V N-Channel MOSFET
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MSF9N70
700V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Power Dissipation (TC = 25 °C)
PD
Power Dissipation (TC = 100 °C)
TJ,TSTG
Operating and Storage Temperature Range
Note:
1. Pulse width limited by maximum junction temperature
2. L = 15mH, IAS =9.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 9.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Static Characteristics
Symbol
Test Conditions
VGS
VDS = VGS, ID = 250μA
*RDS(ON)
VGS = 10 V , ID = 4.75 A
BVDSS
VGS = 0 V , ID = 250μA
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
IDSS
VDS = 700 V , VGS = 0 V
VDS = 560 V , VGS = 0 V , Tj= 125°C
GFS
VDS = 30 V, VDS = 0 V
IGSS
VDS =-30 V, VDS = 0 V
Dynamic Characteristics
Symbol
Test Conditions
Qg
Qgs
VDS = 520 V,ID = 10 A,
VGS = 10 V
Qgd
td(on)
tr
td(off)
VDS = 325 V, ID = 10 A,
RG = 25 Ω
tf
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
Value
35
0.30
-55 to +150
Unit
W
W/°C
°C
Min
Typ.
Max. Units
2.5
4.5
V
--
0.8
1.0
mΩ
700
--
--
V
0.6
--
--
1
uA
10
100
nA
--
--
-100
nA
Min
Typ.
Max. Units
--
48
58
nC
--
7.0
--
--
18
--
--
25
55
ns
--
70
150
ns
--
140
300
ns
--
80
165
ns
--
1650
2050
pF
--
165
217
pF
--
18
25
pF
Publication Order Number: [MSF9N70]
© Bruckewell Technology Corporation Rev. A -2014
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