MSF8N50 Datasheet, PDF (2/8 Pages) Bruckewell Technology LTD – 500V N-Channel MOSFET

MSF8N50
500V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Power Dissipation (TC = 25 °C)
P_D
Power Dissipation (TC = 100 °C)
T_J,T_STG
Operating and Storage Temperature Range
Note:
1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Thermal characteristics (Tc=25°C unless otherwise noted)
Symbol
Parameter
Rthjc
Maximum Junction-to-Case
R_θJA
Maximum Junction-to-Ambient
Static Characteristics
Symbol
Test Conditions
V_GS
V_DS = V_GS, I_D = 250μA
*R_DS(ON)
V_GS = 10 V , I_D = 4 A
BV_DSS
V_GS = 0 V , I_D = 250μA
△BV_DSS /△T_J
I_D = 250μA, Referenced to 25°C
I_DSS
V_DS = 500 V , V_GS = 0 V
V_DS = 400 V , V_GS = 0 V , T_j= 125°C
I_GSS
V_DS = ±30
Dynamic Characteristics
Symbol
Test Conditions
Q_g
Q_gs
V_DS = 400 V,I_D = 8 A,
V_GS = 10 V
Q_gd
t_d(on)
t_r
t_d(off)
V_DD = 250 V, I_D = 8 A,
R_G = 25 Ω
tf
C_ISS
C_OSS
C_RSS
V_DS = 25 V, V_GS = 0 V,
f = 1.0MHz
Value
44
0.35
-55 to +150
Unit
W
W/°C
°C
Max.
2.8
62.5
Units
°C/W
Min
Typ.
Max. Units
2.0
--
4.0
V
--
0.7
0.85
Ω
500
--
--
V
--
0.5
--
V/°C
--
--
1
uA
10
--
--
±100
nA
Min
Typ.
Max. Units
--
25
33
nC
--
4
5
nC
--
10
13
nC
--
15
30
ns
--
25
50
ns
--
60
120
ns
--
25
50
ns
--
850
1105
pF
--
150
195
pF
--
20
26
pF
Publication Order Number: [MSF8N50]
© Bruckewell Technology Corporation Rev. A -2014