MSF5N50 Datasheet, PDF (2/8 Pages) Bruckewell Technology LTD – 500V N-Channel MOSFET

MSF5N50
500V N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Power Dissipation (TC=25°C)
P_D
Power Dissipation (TC=100°C)
T_STG
Operating and Storage Temperature Range
NOTE:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I_AS=4.5A, V_DD=50V, R_G=25Ω, Starting TJ =25°˚C
3. I_SD≤4.5A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Static Characteristics
Symbol
Test Conditions
V_GS
V_DS = V_GS, I_D = 250μA
*R_DS(ON)
V_GS = 10 V , I_D = 2.25 A
BV_DSS
V_GS = 0 V , I_D = 250μA
△BV_DSS /△T_J
I_D = 250μA, Referenced to 25°C
I_DSS
I_GSSF
V_DS = 500 V , V_GS = 0 V
V_DS = 400 V , V_GS = 0 V , T_j = 125°C
V_DS = 30 V, V_DS = 0 V
I_GSSR
V_DS = -30 V, V_DS = 0 V
Value
38
0.3
-55 to +150
Min
Typ.
2.0
--
1.2
500
--
0.4
--
--
--
--
Unit
W
W/°C
°C
Max.
4.0
1.5
--
10
100
100
-100
Units
V
mΩ
V
V/°C
uA
nA
nA
Dynamic Characteristics
Symbol
Test Conditions
Q_g
Q_gs
V_DS = 400 V,I_D = 4.5 A,
V_GS = 10 V
Q_gd
t_d(on)
t_r
t_d(off)
V_DS = 250 V, I_D = 2.5 A,
R_G = 25 Ω
tf
C_ISS
C_OSS
C_RSS
V_DS = 25 V, V_GS = 0 V,
f = 1.0MHz
Min
Typ.
Max. Units
--
14
18
nC
--
2.5
--
nC
--
6
--
nC
--
20
40
ns
--
25
50
ns
--
45
90
ns
--
25
50
ns
--
550
720
pF
--
80
105
pF
--
10
13
pF
Publication Order Number: [MSF5N50]
© Bruckewell Technology Corporation Rev. A -2014