MSC49N60X Datasheet, PDF (2/6 Pages) Bruckewell Technology LTD – 40V N-Channel MOSFETs

MSC49N60X
40V N-Channel MOSFETs
Absolute Maximum Ratings (T_A=25°C unless otherwise noted)
Symbol
Parameter
IAS
Single Pulse Avalanched Current²
Power Dissipation (T_C=25°C)
P_D
Power Dissipation - Derate above 25°C
T_J
Operating Junction Temperature Range
T_STG
Storage Temperature Range
Value
79
135
1.08
-55 to +150
-55 to +150
Unit
A
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_ΘjA
Thermal Resistance Junction to ambient
R_θJC
Thermal Resistance Junction to Case
Typ.
--
--
Max.
62
0.92
Units
°C/W
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Off Characteristics
Symbol Parameter
Test Conditions
Min
BV_DSS
Drain-Source Breakdown Voltage _{VGS = VGS, ID = 250uA}
40
△BV_DSS
/△TJ
BVDSS Temperature Coefficient
Reference to 25°C , ID=1mA
I_GSS
Gate-Source Leakage Current
V_DS = 0 V , V_GS = ±20 V
I_DSS
Drain-Source Leakage Current
V_DS = 40 V , V_GS = 0 V , T_J= 25°C
V_DS = 32 V , V_GS = 0 V , T_J= 125°C
Typ.
Max. Units
V
0.03
V/°C
±100 nA
1
uA
10
On Characteristics
Symbol Parameter
R_DS(on)
Drain-Source On-Resistance
V_GS(th)
△V_GS(th)
g_fs
Gate Threshold Voltage
V_GS(th) Temperature Coefficient
Forward Tranconductance
Test Conditions
V_GS = 10 V, I_D = 25 A
V_GS = 4.5 V , I_D = 12 A
V_DS = V_GS, I_D =-250μA
V_DS = V_GS, I_D =-250μA
V_DS = 10 V , I_D = 2 A
Min Typ. Max. Units
2.2 2.8
mΩ
2.6 3.5
1.2 1.6 2.5
V
-5
mV/°C
45
S
Dynamic and switching Characteristics
Symbol Parameter
t_d(on)
Turn-On Delay Time^3,4
t_r
Rise Time^3,4
t_d(off)
Turn-Off Delay Time^3,4
tf
Fall Time^3,4
Test Conditions
I_D = 1 A , R_G = 6 Ω,
V_GS = 10 V , V_DD = 20 V
Min
Typ. Max. Units
--
28
50
ns
--
3.2
6.5
ns
--
89
160
ns
--
14
28
ns
Publication Order Number: [MSC49N60X]
© Bruckewell Technology Corporation Rev. A -2016