MSB6N70 Datasheet, PDF (2/8 Pages) Bruckewell Technology LTD – 700V N-Channel MOSFET

MSB6N70 700V N-Channel MOSFET
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Test Conditions
Static Characteristics
VGS
VDS = VGS, ID=250μA
*RDS(ON)
VGS =10V,ID =2.8A
BVDSS
VGS=0, ID=250μA
∆BVDSS/∆Tj
Reference to 25°C, ID=250μA
IDSS
VDS =700V,VGS =0V
VDS =560V, VGS =0, Tj=125°C
IGSSF
VGS =30V,VDS =0V
IGSSR
VGS =-30V,VDS =0V
Dynamic Characteristics
Ciss
Coss
VGS=0V, VDS=25V, f=1MHz
Crss
td(ON)
tr
td(OFF)
VDS =350V,ID =5.5A, RG = 25 Ω
tf
Qg
Qgs
VDS =560V,ID =5.5A, VGS =10V
Qgd
Source-Drain Diode Characteristics
IS
ISM
VSD
IS = 5.5A, VGS = 0 V
trr
IS = 5.5 A, VGS = 0 V diF/dt = 100 A/μs
Qrr
Min.
2.0
-
700
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
1.5
-
0.70
-
-
-
-
1100
110
12
10
35
45
40
29
5
11
-
-
-
390
3.6
Max.
Unit
4.0
V
1.8
mΩ
-
V
1
uA
10
100
nA
-100
nA
1500
150
pF
16
30
80
ns
100
90
37
nC
-
-
5.5
A
22
1.5
V
-
nS
-
nC
©Bruckewell Technology Corporation Rev. A -2013