MS5N50 Datasheet, PDF (2/6 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

MS5N50
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
TL Maximum Temperature for Soldering @ Lead at 0.125
T_L
in(0.318mm) from case for 10 seconds
Value
300
TPKG Maximum Temperature for Soldering @ Package Body for
T_PKG
260
10 seconds
Total Power Dissipation(@TC = 25 °C) 100 W
73
P_D
Derating Factor above 25 °C
0.57
T_STG
T_J
Operating Junction Temperature
Storage Temperature
-55 to +150
150
Note:
1. TJ=+25°C to +150°C.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. ISD=4.5A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150°C.
4. IAS=4.5A, VDD=50V, L=15mH, RG=25Ω, starting TJ=+25°C.
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient
Min.
--
--
Value
Typ.
--
--
Max.
1.47
62.5
Unit
°C
°C
W
W/°C
°C
°C
Units
°C/W
°C/W
Static Characteristics
Symbol Parameter
Test Conditions
Min
BV_DSS
V_GS = 0 V,I_D = 250 uA
Drain-Source Breakdown Voltage
500
Tj = 150°C
--
△BV_{DSS Breakdown Voltage Temperature ID = 250μA, Referenced}
--
/△T_J
Coefficient
to 25°C
V_GS(th)
Gate Threshold Voltage
V_DS = V_GS, I_D = 250 uA
2.0
I_DSS
Drain-Source Leakage Current
V_DS = 500 V , V_GS = 0 V
--
V_DS = 400 V , T_C = 125°C
I_GSS
Gate-Source Leakage,Forward
V_GS = ±30
--
R_DS(ON)
Static Drain-Source
On-state Resis-tance
V_GS = -10 V , I_D = 2.7 A
--
Typ.
Max. Units
--
--
V
550
--
V
0.6
--
V/°C
--
4.0
V
--
25
uA
250
nA
--
±100
nA
--
1.5
Ω
Dynamic Characteristics
Symbol Parameter
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge (Miller Charge)
Test Conditions
V_DD = 250 V,
V_GS = 10 V,
I_D= 4.5 A
Min
Typ.
Max. Units
--
11
--
nC
--
3
--
nC
--
5
--
nC
Publication Order Number: [MS5N50]
© Bruckewell Technology Corporation Rev. A -2014