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| MMBT3906 Datasheet, PDF (2/5 Pages) NXP Semiconductors – PNP switching transistor | |||
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MMBT3906
PNP General Purpose Amplifier
THERMAL CHARACTERISTICS
Symbol
Characteristic
Total Device Dissipation
Alumina Substrate
PD
TA=25°C
Derate above 25°C
RθJA
Thermal Resistance Junction to Ambient
TJ,Tstg
Junction and Storage Temperature
Rating
Unit
300
mW
2.4
mW/°C
417
°C/W
150°C, -55 to + 150°C
DEVICE MARKING
MMBT3906=2A
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
OFF CHARACTERISTICS
Symbol
Characteristic
Min
Max
Collector-Emitter Breakdown Voltage(3)
V(BR)CEO
-40
--
(IC = -1.0mAdc , IB = 0 )
Collector-Base Breakdown Voltage
V(BR)CBO
(IC = -10μAdc , IE = 0 )
-40
--
Emitter-Base Breakdown Voltage
V(BR)CEO
-6.0
--
(IE = -10μAdc , IC = 0 )
Base Cutoff Current
IBEX
(VCE = -30Vdc , VEB = -3.0 Vdc )
--
-50
Collector Cutoff Current
ICEX
(VCE= -30Vdc , VEB = -3.0 Vdc )
--
-50
ON CHARACTERISTICS
Symbol
Characteristic
Min
DC Current Gain
IC = -0.1mAdc , VCE = -1.0Vdc
40
hPE
IC = -1.0mAdc , VCE = -1.0Vdc
70
IC = -10mAdc , VCE = -1.0Vdc
100
IC = -50mAdc , VCE = -1.0Vdc
60
IC = -100mAdc , VCE = -1.0Vdc
30
Collector-Emitter Saturation Voltage
VCE(sat)
(IC = -10mAdc ,VB = -1.0 mAdc )
--
(IC = -50mAdc ,VB = -5.0 mAdc )
--
Max
--
--
300
--
--
-0.25
-0.4
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
Unit
--
Vdc
Publication Order Number: [MMBT3906]
© Bruckewell Technology Corporation Rev. A -2014
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