BWS2301 Datasheet, PDF (2/3 Pages) Bruckewell Technology LTD – P-Channel Enhancement-Mode

Preliminary_BWS2301
P-Channel Enhancement-Mode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
BWS2301
Unit
BVDSS
Drain-Source Voltage
-20
V
VGS
Gate- Source Voltage
+/-8
V
ID
Drain Current (continuous)
-2.3
A
IDM
Drain Current (pulsed)
-10
A
PD
Total Device Dissipation
450
mW
TJ
TSTG
Junction
Storage Temperature
150
°C
-55 to +150
°C
Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
(ID =250uA,VGS=0V)
VGS(th)
Gate Threshold Voltage
(ID = 250uA,VGS= VDS)
VDS(ON)
Drain-Source On Voltage
(ID= -50mA,VGS= -5V)
(ID = -500mA,VGS= -10V)
VSD
Diode Forward Voltage Drop
(IS= -0.75A,VGS=0V)
IDSS
Zero Gate Voltage Drain Current
(VGS=0V, VDS= -16V)
(VGS=0V, VDS= -16V, TA=55℃)
IGSS
Gate Body Leakage
(VGS=+8V, VDS=0V)
RDS(ON)
Static Drain-Source On-State Resistance
(ID= 2.6A,VGS=4.5V)
(ID=1A,VGS=2.5V)
CISS
Input Capacitance
(VGS=0V, VDS= -6V,f=1MHz)
COSS
Output Capacitance
(VGS=0V, VDS= -6V,f=1MHz)
t(on)
Turn-ON Time
(VDS= -6V, ID= -1A, RGEN=6Ω)
t(off)
Turn-OFF Time
(VDS= -6V, ID= -1A, RGEN=6Ω)
Pulse Width<300μs; Duty Cycle<2.0%
MIN
TYP
MAX UNIT
-20
V
-0.5
-1.5
V
-0.375
V
-3.75
-1.2
V
-1
uA
-10
+/-100
nA
0.15
mΩ
0.22
880
pF
270
pF
20
ns
65
ns
Publication Order Number: [BWS2301]
© Bruckewell Technology Corporation Rev. A -2014