BW3402 Datasheet, PDF (2/5 Pages) Bruckewell Technology LTD – N-Channel Enhancement-Mode MOSFETs

BW3402
N-Channel Enhancement-Mode
MOSFETs
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings (Tc=25°C unless otherwise noted)
Parameter
Symbol
BW3402
Unit
Drain-Source Voltage
BVDSS
30
V
Gate- Source Voltage
VGS
12
V
Drain Current (continuous)
ID
4.6
A
Drain Current (pulsed)
IDM
16
A
Thermal resistance,junction to ambient air
PD
1380
mW
Junction
TJ
150
°C
Storage Temperature
TSTG
-55 to +150
°C
Maximum Ratings (Tc=25°C unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage (I_D = 250uA,V_GS = 0 V)
Gate Threshold Voltage (I_D = 250uA,V_GS = V_DS)
Diode Forward Voltage Drop (I_S = 1 A,V_GS = 0 V)
Zero Gate Voltage Drain Current
(VGS=0V, VDS= 24V)
(VGS=0V, VDS= 24V, TA=55°C)
Symbol
Min
Typ.
Max. Units
BV_DSS
30
--
V
VGS(th)
0.7
18
V
VSD
--
1
V
IDSS
1
uA
5
Maximum Ratings (Tc=25°C unless otherwise noted)
Parameter
Gate Body Leakage (V_GS =+12 V, V_DS = 0 V)
Static Drain-Source On-State Resistance
(I_D = 4.6 A,V_GS = 10 V)
Static Drain-Source On-State Resistance
(I_D = 4 A,V_GS = 4.5 V)
Static Drain-Source On-State Resistance
(I_D = 1 A,V_GS = 2.5 V)
Input Capacitance (V_GS = 0 V, V_DS = 15 V,f = 1MHz)
Output Capacitance (V_GS = 0 V, V_DS = 15 V,f = 1MHz)
Turn-ON Time (V_DS = 15 V, V_GS = 10 V, R_GEN = 6 Ω)
Turn-OFF Time (V_DS = 15 V, V_GS = 10 V, R_GEN = 6 Ω)
Pulse Width<300μs; Duty Cycle<2.0%
Symbol
Min
IGSS
--
RDS(ON)
--
--
CISS
COSS
t(on)
t(off)
--
Typ.
Max. Units
+/-100 nA
30
mΩ
50
mΩ
100
pF
954
--
pF
115
--
pF
6.3
--
ns
38.2
--
ns
Publication Order Number: [BW3402]
© Bruckewell Technology Corporation Rev. A -2014