BC856-8W Datasheet, PDF (2/3 Pages) Bruckewell Technology LTD – PNP Silicon Epitaxial Planar Transistor

BC856-8W
PNP Silicon Epitaxial Planar Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM Rating at 25 °C ambient temperature unless otherwise specified.
Symbol
Parameter
Value
Collector-Base Voltage BC856W
-80
VCBO
BC857W
-50
BC858W
-30
Collector-Emitter Voltage BC856W
-65
VCEO
BC857W
-45
BC858W
-30
VEBO
Emitter-Base Voltage
-5
IC
Collector Current -Continuous
-100
PC
Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-65 to +150
PNP Silicon Epitaxial Planar Transistor
Parameter
Symbol
Conditions
Min
IC=-10μA,IE=0 BC856W
-80
Collector-base breakdown voltage _V(BR)CBO
BC857W
-50
BC858W
-30
Collector-emitter breakdown
IC=-10mA,IB=0 BC856W
-65
V(BR)CEO
BC857W
-45
voltage
BC858W
-30
Emitter-base breakdown voltage
V(BR)EBO IE=-1μA,IC=0
-5
Collector cut-off current
ICBO
BC856W VCB=-70V,IE=0
BC857W VCB=-45V,IE=0
BC858W VCB=-25V,IE=0
Collector cut-off current
ICEO
BC856W VCE=-60V,IB=0
BC857W VCE=-40V,IB=0
BC858W VCE=-25V,IB=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0 -0.1 μA
VCE=-5V,IC=-2mA
DC current gain
BC856AW,BC857AW
125
hFE
BC856BW,BC857BW,BC858BW
220
BC857CW,BC858CW
420
PNP Silicon Epitaxial Planar Transistor
Parameter
Symbol
Conditions
Min
Collector-emitter saturation
VCE(sat) IC=-100mA, IB= -5mA -0.5 mV
Base-emitter saturation voltage
VBE(sat) IC=-100mA, IB= -5mA -1.1 V
Transition frequency
fT
VCE=-5V,IC=-10mA,f=100MHz
100
Collector capacitance
CC
VCB=-10V,f=1MHz
Unit
V
V
V
mA
mW
°C
Max. Units
V
V
V
-0.1
μA
-0.1
μA
-0.1
μA
250
475
800
Max.
-0.5
-1.1
4.5
Units
mV
V
MHz
pF
Publication Order Number: [BC856-8W]
© Bruckewell Technology Corporation Rev. A -2014