BC817 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN general purpose transistor

BC817
Surface mount switching diode
ORDERING INFORMATION
Type No.
BC817-16
BC817-25
BC817-40
Marking
6A
6B
6C
Package Code
SOD-123
SOD-123
SOD-123
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATING @ Ta=25°C unless otherwise specified
Parameter
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current -Continuous
I_C
Collector Dissipation
P_C
Junction and Storage Temperature
Tj,Tstg
Value
50
45
5
500
300
-55 to +150
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Parameter
Conditions
Symbol
Min
Collector-base breakdown voltage IC=10μA IE=0
V_(BR)CBO
50
Collector-emitter breakdown voltage IC=10mA IB=0
V_(BR)CEO
45
Emitter-base breakdown voltage
IE=1μA IC=0
V_(BR)EBO
5
Collector cut-off current
VCB=45V IE=0
I_CBO
Emitter cut-off current
VEB=4V IC=0 0.1
I_EBO
DC current gain
VCE=1V IC=100mA
100
h_FE
VCE=1V IC=100mA
40
Collector-emitter saturation voltage IC=500mA IB=50mA
V_CE(sat)
Base-emitter saturation voltage
IC=500mA IB=50mA
V_BE(sat)
Collecter capacitance
VCB=10V,f=1MHz
C_ob
Transition frequency
VCE=5V IC=10mA
f_T
100
f=100MHz
Max
0.1
0.1
600
0.7
1.2
10
Unit
V
V
V
mA
mW
°C
Unit
V
V
V
μA
μA
V
V
pF
MHz
CLASSIFICATION OF HFE(1)
Rank
Range
Marking
BC817-16
100-250
6A
BC817-25
160-400
6B
BC817-40
250-600
6C
Publication Order Number: [BC817]
© Bruckewell Technology Corporation Rev. A -2014