BAS70 Datasheet, PDF (2/5 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70_BAS70-04_BAS70-05_BAS70-06
Schottky Diodes
Maximum Ratings
Symbol
Parameter
RthJA
Junction - ambient BAS 70
RthJA
Junction - ambient BAS 70-04
RthJS
Junction - soldering point BAS 70
RthJS
Junction - soldering point BAS 70-04
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Value
≤405
≤575
≤335
≤435
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
Symbol
Parameter
MIN
TYP
Breakdown voltage
V(BR)
70
I(BR) = 10 μA
Reverse current μA
IR
VR = 50 V
VR = 70 V
Forward voltage
IF = 1 mA
375
VF
IF = 10 mA
705
IF = 15 mA
880
Unit
K/W
K/W
K/W
K/W
MAX
UNIT
V
0.1
μA
1.0
410
mV
750
1000
AC characteristics
Symbol
Parameter
Diode capacitance CT - pF
CT
VR = 0 V, f = 1 MHz
τ
Charge carrier life time ps
IF = 25 mA
Differential forward resistance
RF
IF = 10 mA, f = 10 kHz
MIN
TYP
MAX UNIT
1.6
2
pF
100
ps
30
Ω
Publication Order Number: [BAS70_BAS70-04_BAS70-05_BAS70-06]
© Bruckewell Technology Corporation Rev. A -2014