MSW20N50 Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – 500V N-Channel MOSFET

MSW20N50
500V N-Channel MOSFET
Description
This latest technology has been especially designed to
minimize on-state resistance, have a high rugged
avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies.
Features
• RDS(on) (Typical 0.26Ω )@VGS=10V
• Gate Charge (Typical 90nC)
• Improved dv/dt Capability, High Ruggedness
• 100% EAS Test
• Extended Safe Operating Area
• RoHS compliant package
Application
• High current, High speed switching
• PFC (Power Factor Correction)
• SMPS (Switched Mode Power Supplies)
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
500
V
V_GS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
20
A
13
A
I_DM
Drain Current Pulsed
80
A
E_AS
Single Pulsed Avalanche Energy
1400
mJ
E_AR
Repetitive Avalanche Energy
21
mJ
Publication Order Number: [MSW20N50]
© Bruckewell Technology Corporation Rev. A -2014