MSW11N90 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 900V N-Channel MOSFET

MSW11N90
900V N-Channel MOSFET
Description
This latest technology has been especially designed to
minimize on-state resistance, have a high rugged
avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies.
Features
• RDS(on) (Max 1.1 Ω )@VGS=10V
• Gate Charge (Typical 70nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150˚C)
• RoHS compliant package
Packing & Order Information
30/Tube ; 540/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
I_DM
Drain Current Pulsed
E_AS
Single Pulsed Avalanche Energy
E_AR
Repetitive Avalanche Energy
Power Dissipation (TC = 25 °C)
P_D
- Derate above 25°C
dV/dt
Peak Diode Recovery dV/dt
Value
900
±30
11
6.6
44
1280
30
300
2.38
4
Unit
V
V
A
A
A
mJ
mJ
W
W/°C
V/ns
Publication Order Number: [MSW11N90]
© Bruckewell Technology Corporation Rev. A -2014