MSU4N65 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 650V N-Channel MOSFET

MSU4N65
650V N-Channel MOSFET
Description
The MSU4N65 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-251
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• 100% EAS Test
• Rugged Gate Oxide Technology
• Extremely Low Intrinsic Capacitances
• Remarkable Switching Characteristics
• Unequalled Gate Charge : 15 nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON) : 2.4 Ω (Typ.) @VGS=10V
• RoHS compliant package
Packing & Order Information
80/Tube ; 4,000/Box
Graphic symbol
Symbol
A
A1
B
b
b1
C
C1
D
D1
E
e
e1
L
Dimensions in
Millimeters
min
max
2.15
2.45
1.00
1.40
1.25
1.75
0.45
0.75
0.65
0.95
0.38
0.64
0.38
0.64
6.30
6.70
5.10
5.50
5.30
5.70
2.3 (typ.)
4.4
4.8
7.4
8.0
Dimensions in
Inches
min
max
0.85
0.96
0.39
0.55
0.49
0.69
0.18
0.3
0.26
0.37
0.15
0.25
0.15
0.25
2.48
2.64
2.01
2.17
2.09
2.24
0.91 (typ.)
1.73
1.89
2.91
3.15
Publication Order Number: [MSU4N65]
© Bruckewell Technology Corporation Rev. A -2014