MSU4N60_S Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – 600V N-Channel MOSFET

Preliminary MSU4N60_S
600V N-Channel MOSFET
Description
The MSU4N60_S is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-251
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge : 12.8 nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V
• 100% Avalanche Tested
• RoHS compliant package
Packing & Order Information
80/Tube ; 4,000/Box
Dimensions in
Millimeters
Symbol
min
max
A
2.15
2.45
A1
1.00
1.40
B
1.25
1.75
b
0.45
0.75
b1
0.65
0.95
C
0.38
0.64
C1
0.38
0.64
D
6.30
6.70
D1
5.10
5.50
E
5.30
5.70
e
2.3 (typ.)
e1
4.4
4.8
L
7.4
8.0
Graphic symbol
Dimensions in
Inches
min
max
0.85
0.96
0.39
0.55
0.49
0.69
0.18
0.3
0.26
0.37
0.15
0.25
0.15
0.25
2.48
2.64
2.01
2.17
2.09
2.24
0.91 (typ.)
1.73
1.89
2.91
3.15
Publication Order Number: [MSU4N60_S]
© Bruckewell Technology Corporation Rev. A -2014