MSU2N60S Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – 600V N-Channel MOSFET

MSU2N60S
600V N-Channel MOSFET
Description
The MSU2N60S is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-251
package is universally preferred for all
commercial-industrial applications
Features
• Rugged Gate Oxide Technology
• Extremely Low Intrinsic Capacitances
• Remarkable Switching Characteristics
• Unrivalled Gate Charge : 9.5nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V
• 100% EAS Test
• RoHS compliant package
Packing & Order Information
80/Tube ; 4,000/Box
Dimensions in
Millimeters
Symbol
min
max
A
2.15
2.45
A1
1.00
1.40
B
1.25
1.75
b
0.45
0.75
b1
0.65
0.95
C
0.38
0.64
C1
0.38
0.64
D
6.30
6.70
D1
5.10
5.50
E
5.30
5.70
e
2.3 (typ.)
e1
4.4
4.8
L
7.4
8.0
Graphic symbol
Dimensions in
Inches
min
max
0.85
0.96
0.39
0.55
0.49
0.69
0.18
0.3
0.26
0.37
0.15
0.25
0.15
0.25
2.48
2.64
2.01
2.17
2.09
2.24
0.91 (typ.)
1.73
1.89
2.91
3.15
Publication Order Number: [MSU2N60S]
© Bruckewell Technology Corporation Rev. A -2014