MSQ7434N Datasheet, PDF (1/3 Pages) Bruckewell Technology LTD – Low rDS(on) provides higher efficiency and

MSQ7434N
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell
density trench process to provide low RDS (on) and to ensure
minimal power loss and heat dissipation. Typical applications
are DC-DC converters and power management in portable and
battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Key Features:
• Low rDS(on) provides higher efficiency and
• extends battery life
• Low thermal impedance copper leadframe
• SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
Bruckewell Technology Corp., Ltd.
SOIC-8PP
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @ TC=25°C
ID
24
A
Continuous Drain Current @ TC=70°C
ID
20
A
Pulsed Drain Current
IDM
60
A
Continuous Source Current (Diode Conduction)
IS
2.9
A
Power Dissipation (TC=25°C)
Power Dissipation (TC=100°C)
5.0
W
PD
3.2
W
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Thermal characteristics (Tc=25°C unless otherwise noted)
Parameter
Symbol
Maximum Junction-to-Ambient(RthJA)
t <= 10 sec
Steady State
Value
25
65
Unit
°C/W