MSQ6N40 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

MSQ6N40
N-Channel Enhancement Mode Power MOSFET
Description
The MSQ6N40 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The QFN-5X6
package which has been designed to achieve very low
on-state resistance providing also one of the
best-in-class figure of merit (FOM)
Features
• BVDSS=400V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Open Framed Power Supply
• Adapter
• STB
Packing & Order Information
3,000/Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DSS
Drain-Source Voltage
400
V
V_GS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
5.5
A
3.5
A
I_DM
Drain Current Pulsed
16.4
A
E_AS
Single Pulsed Avalanche Energy
240
mJ
E_AR
Repetitive Avalanche Energy
10
mJ
Publication Order Number: [MSQ6N40]
© Bruckewell Technology Corporation Rev. A -2014