MSQ5N50 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

Preliminary MSQ5N50
N-Channel Enhancement Mode Power MOSFET
Description
The MSQ5N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The QFN-5X6
package which has been designed to achieve very low
on-state resistance providing also one of the
best-in-class figure of merit (FOM)
Features
• RDS(on) = 1.50Ω @VGS = 10 V
• Low gate charge ( typical 11 nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant package
Application
• Ballast
• Inverter
• Switching applications
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
500
V
V_GS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
5
A
3.0
A
I_DM
Drain Current Pulsed
20
A
E_AS
Single Pulsed Avalanche Energy
305
mJ
E_AR
Repetitive Avalanche Energy
4.6
mJ
Publication Order Number: [MSQ5N50]
© Bruckewell Technology Corporation Rev. A -2014