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MSP02N10 Datasheet, PDF (1/5 Pages) Bruckewell Technology LTD – N-Channel 100-V (D-S) MOSFET
MSP02N10
N-Channel 100-V (D-S) MOSFET
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
• RoHS compliant package
Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
Packing & Order Information
3,000/Reel
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current -Continuousa (TA =25°C)
Drain Current -Continuousa (TA =70°C)
IDM
Pulsed Drain Currentb
Total Power Dissipationa (TA=25°C)
PD
Total Power Dissipationa (TA=70°C)
Is
Continuous Source Current (Diode Conduction)a
100
V
±20
V
2.2
A
1.8
A
10
A
2
W
1.3
W
2.5
A
TJ,TSTG
Operating and Storage Temperature Range
-55 to +150
°C
Publication Order Number: [MSP02N10]
© Bruckewell Technology Corporation Rev. A -2014