MSN23P09S Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 20V P-Channel MOSFETs

MSN23P09S
20V P-Channel MOSFETs
Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V
• Improved dv/dt capability
• Green Device Available
• 100% EAS Guaranteed
• Fast Switching
• RoHS compliant package
Application
• Notebook
• Load Switch
• Battery Protection
• Hand-held Instruments
SOT23-3S Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
V_DS
Drain to Source Voltage
-20
V
V_GS
Gate to Source Voltage
±10
V
Continuous Drain Current (TC=25°C)
I_D
Continuous Drain Current (TC=100°C)
I_DM
Drain Current Pulsed¹
-5.8
A
-3.7
-23.2
A
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016