MSL03N20 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 200V N-Channel MOSFETs

MSL03N20
200V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• Improved dv/dt capability
• Fast switching
• Green Device Available
• RoHS compliant package
Applications
• High efficient switched mode power supplies
• TV Power
• Adapter/charger
• LED Lighting
• Networking
SOT223 Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (T_A=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
200
V
V_GS
Gate-Source Voltage
±30
V
I_D
Drain Current - Continuous (T_C=25°C) (Chip Limitation)
Drain Current - Continuous (T_C=100°C) (Chip Limitation)
I_DM
Drain Current - Pulsed¹
3
A
1.9
A
12
A
P_D
Power Dissipation (T_C=25°C)
1.78
W
Publication Order Number: [MSL03N20]
© Bruckewell Technology Corporation Rev. A -2016