MSL01N60 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 600V N-Channel MOSFETs

MSL01N60
600V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• Improved dv/dt capability
• Fast switching
• 100% EAS Guaranteed
• Green Device Available
• RoHS compliant package
Applications
• High efficient switched mode power supplies
• TV Power
• Adapter/charger
• LED Lighting
SOT223 Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (T_A=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
600
V
V_GS
Gate-Source Voltage
±30
V
I_D
I_DM
EAS
Drain Current - Continuous (T_C=25°C) (Chip Limitation)
Drain Current - Continuous (T_C=100°C) (Chip Limitation)
Drain Current - Pulsed¹
Single Pulse Avalanche Energy²
1
A
0.6
A
4
A
2
mJ
Publication Order Number: [MSL01N60]
© Bruckewell Technology Corporation Rev. A -2016