MSK19N03 Datasheet, PDF (1/5 Pages) Bruckewell Technology LTD – N-Channel 30-V (D-S) MOSFET

MSK19N03
N-Channel 30-V (D-S) MOSFET
Description
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and
to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, and PCMCIA cards, cellular
and cordless telephones.
Features
• Low rDS(on) provides higher efficiency and extends
battery life
• Low thermal impedance copper lead frame DFN3x3
saves board space
• Fast switching speed
• High performance trench technology
• RoHS compliant package
Packing & Order Information
3,000/Reel
DIM.
MILLIMETERS
INCHES
MIN NOM MAX MIN NOM MAX
A 0.700 0.800 0.900 0.028 0.0315 0.0354
A1 0.000 - 0.050 0.000 - 0.002
b 0.240 0.300 0.350 0.009 0.012 0.014
c 0.080 0.152 0.250 0.003 0.006 0.010
DIM.
2.90 BSC
0.114 BSC
E
2.80 BSC
0.110 BSC
E1
2.30 BSC
0.091 BSC
e
0.65 BSC
0.026 BSC
L 0.200 0.375 0.450 0.008 0.0148 0.0177
L1 0.000 - 0.100 0.000 - 0.004
θ1 0.000 10.000 12.000 0.000 10.000 12.000
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (T_A=25°C Unless Otherwise Noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
30
V
V_GS
Gate-Source Voltage
±20
V
I_D
Drain Current -Continuous^a (T_A =25°C)
Drain Current -Continuous^a (T_A =70°C)
I_DM
Pulsed Drain Current^b
Total Power Dissipation^a (T_A=25°C)
P_D
Total Power Dissipation^a (T_A=70°C)
±19
A
±16
A
±40
A
3.5
W
2
W
Publication Order Number: [MSK19N03]
© Bruckewell Technology Corporation Rev. A -2014