MSF9N20 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – N-Channel 200-V (D-S) MOSFET

MSF9N20
N-Channel 200-V (D-S) MOSFET
Description
The MSF9N20 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low RDS(on) trench technology
• Low thermal impedance
• Fast switching speed
• RoHS compliant package
Application
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
200
V
V_GS
Gate-Source Voltage
±20
V
I_D
Drain Current -Continuous (TC=25°C)
9
A
I_DM
Drain Current Pulsed
50
A
I_S
Single Pulsed Avalanche Energy
50
A
P_D
Total Power Dissipation (TC = 25 °C)
60
W
T_J,T_STG
Operating and Storage Temperature Range
-55 to +175
°C
Publication Order Number: [MSF9N20]
© Bruckewell Technology Corporation Rev. A -2014