MSF6N70 Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – 700V N-Channel MOSFET

MSF6N70 700V N-Channel MOSFET
GENERAL DESCRIPTION
The MSF6N70 is a N-channel enhancement-mode MOSFET , providing
the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost effectiveness. The TO-220F package is
universally preferred for all commercial-industrial applications
FEATURES
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant / Halogen free package available
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current @ TC=25°C
ID
Continuous Drain Current @ TC=100°C
ID
Pulsed Drain Current
IDM
Gate-Source Voltage
VGS
Single Pulsed Avalanche Energy
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dV/dt
dV/dt
Power Dissipation (TC=25°C)
PD
Power Dissipation (TC=100°C)
Operating Junction and Storage Temperature
Tj, Tstg
NOTE:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤5.5A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Value
700
6.0
3.5
22
±30
350
5.5
14.7
5.5
48
0.38
-55~+150
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
°C
©Bruckewell Technology Corporation Rev. B -2013