MSF6N65 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

MSF6N65
N-Channel Enhancement Mode Power MOSFET
Description
The MSF6N65 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Open Framed Power Supply
• Adapter
• STB
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V_DSS
Drain-Source Voltage
650
V
V_GS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
6.0
A
3.6
A
I_DM
Drain Current Pulsed
24
A
I_AR
Avalanche Current
6.0
A
E_AS
Single Pulsed Avalanche Energy
135
mJ
E_AR
Repetitive Avalanche Energy
5.4
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
Publication Order Number: [MSF6N65]
© Bruckewell Technology Corporation Rev. A -2014