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MSF6N40 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET | |||
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MSF6N40
N-Channel Enhancement Mode Power MOSFET
Description
The MSF6N40 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
⢠Low On Resistance
⢠Simple Drive Requirement
⢠Low Gate Charge
⢠Fast Switching Characteristic
⢠RoHS compliant package
Application
⢠Adapter
⢠Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
5.5
A
3.5
A
IDM
Drain Current Pulsed
16.4
A
EAS
Single Pulsed Avalanche Energy
240
mJ
EAR
Repetitive Avalanche Energy
10
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
Publication Order Number: [MSF6N40]
© Bruckewell Technology Corporation Rev. A -2014
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