MSF3N80 Datasheet, PDF (1/7 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET

MSF3N80
800V N-Channel MOSFET
Description
The MSF3N80 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• RDS(on) (Max 4.8 Ω )@VGS=10V
• Gate Charge (Typical 15.0nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150˚C)
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V_DSS
Drain-Source Voltage
800
V
V_GS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
3.0
A
1.8
A
I_DM
Drain Current Pulsed
12
A
E_AS
Single Pulsed Avalanche Energy
336
mJ
E_AR
Repetitive Avalanche Energy
10.7
mJ
dv/dt
Peak Diode Recovery dv/dt
4.0
V/ns
T_J,T_STG
Operating and Storage Temperature Range
-55 to +150
°C
Publication Order Number: [MSF3N80]
© Bruckewell Technology Corporation Rev. A -2014