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MSF20N50 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET | |||
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MSF20N50
N-Channel Enhancement Mode Power MOSFET
Description
The MSF20N50 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
⢠Low On Resistance
⢠Simple Drive Requirement
⢠Low Gate Charge
⢠Fast Switching Characteristic
⢠RoHS compliant package
Application
⢠Switching Mode Power Supply
⢠LCD Panel Power
⢠Adapter
⢠E-bike Charger
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±30
V
Continuous Drain Current (TC=25°C)
ID
Continuous Drain Current (TC=100°C)
20
A
13
A
IDM
Drain Current Pulsed
80
A
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
1100
mJ
28
mJ
dV/dt
Peak Diode Recovery dV/dt
4.5
V/ns
Tj, Tstg
Operating Junction and Storage Temperature
-55~+150
°C
⢠Drain current limited by maximum junction temperature
Publication Order Number: [MSF20N50]
© Bruckewell Technology Corporation Rev. A -2014
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