MSF18N50 Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – 500V N-Channel MOSFET

MSF18N50
500V N-Channel MOSFET
Description
The MSF18N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. he TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• 100% EAS Test
• Extended Safe Operating Area
• RoHS compliant package
Application
• High current, High speed switching
• PFC (Power Factor Correction)
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
I_DM
Drain Current Pulsed
E_AS
Single Pulsed Avalanche Energy
E_AR
Repetitive Avalanche Energy
dV/dt
Peak Diode Recovery dV/dt
Power Dissipation (TC = 25 °C)
P_D
Power Dissipation (TC=100°C)
Value
500
±30
18
10.8
72
990
23.5
4.5
235
1.8
Unit
V
V
A
A
A
mJ
mJ
V/ns
W
W/°C
Publication Order Number: [MSF18N50]
© Bruckewell Technology Corporation Rev. A -2014