MSF16N50 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – 500V N-Channel MOSFET

MSF16N50
500V N-Channel MOSFET
Description
The MSF16N50 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• RDS(on) (Typical 0.33Ω)@VGS=10V
• Gate Charge (Typical 60nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150°C)
• RoHS compliant package
Application
• Switching Mode Power Supply
• LCD Panel Power
• Adapter
• E-bike Charger
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DSS
Drain-Source Voltage
500
V
V_GS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
16
A
10
A
I_DM
Drain Current Pulsed
64
A
E_AS
Single Pulsed Avalanche Energy
995
mJ
E_AR
Repetitive Avalanche Energy
24.5
mJ
dV/dt
Peak Diode Recovery dV/dt
4.5
V/ns
Publication Order Number: [MSF16N50]
© Bruckewell Technology Corporation Rev. A -2014