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MSF15N60 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET
MSF15N60
N-Channel Enhancement Mode Power MOSFET
Description
The MSF15N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
15
A
9.5
A
IDM
Drain Current Pulsed
60
A
EAS
Single Pulsed Avalanche Energy
245
mJ
IAR
Avalanche Current
15
A
EAR
Repetitive Avalanche Energy
24
mJ
dV/dt
Peak Diode Recovery dV/dt
9.8
V/ns
Publication Order Number: [MSF15N60]
© Bruckewell Technology Corporation Rev. A -2014