MSF13N50 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 500V N-Channel MOSFET

MSF13N50
500V N-Channel MOSFET
Description
The MSF13N50 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• RDS(on) (Typical 0.48 Ω )@VGS=10V
• Gate Charge (Typical 43 nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150°C)
• RoHS compliant package
Application
• Open Framed Power Supply
• Adapter
• STB
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
I_DM
Drain Current Pulsed
E_AS
Single Pulsed Avalanche Energy
E_AR
Repetitive Avalanche Energy
dV/dt
Peak Diode Recovery dV/dt
Power Dissipation (TC = 25 °C)
P_D
- Derate above 25 °C
Value
500
±30
13
8
52
939
19.5
4.5
48
0.39
Unit
V
V
A
A
A
mJ
mJ
V/ns
W
W/°C
Publication Order Number: [MSF13N50]
© Bruckewell Technology Corporation Rev. A -2014